Chemical Vapor Deposition of Hafnium Oxynitride Films Using Different Oxidants
As the minimum feature size in complementary metal-oxide-semiconductor (CMOS) devices shrinks, the leakage current through the gate insulator (silicon oxide) will increase sufficiently to impair device operation. A high dielectric constant (k) insulator is needed as a replacement for silicon oxide i...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2006
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| Online Access: | http://hdl.handle.net/1853/7544 |