Applied Mechanical Tensile Strain Effects on Silicon Bipolar and Silicon-Germanium Heterojunction Bipolar Devices
This work investigates the effects of post-fabrication applied mechanical tensile strain on Silicon (Si) Bipolar Junction Transistor (BJT) and Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices. Applied strain effects on MOSFET transistors are being heavily explored, both in ac...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2005
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| Online Access: | http://hdl.handle.net/1853/7192 |