Applied Mechanical Tensile Strain Effects on Silicon Bipolar and Silicon-Germanium Heterojunction Bipolar Devices

Applied Mechanical Tensile Strain Effects on Silicon Bipolar and Silicon-Germanium Heterojunction Bipolar Devices

This work investigates the effects of post-fabrication applied mechanical tensile strain on Silicon (Si) Bipolar Junction Transistor (BJT) and Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) devices. Applied strain effects on MOSFET transistors are being heavily explored, both in ac...

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Bibliographic Details
Main Author: Nayeem, Mustayeen B.
Format: Others
Language:en_US
Published: Georgia Institute of Technology 2005
Subjects:
Mechanical
Compressive
Tensile
Uniaxial
Biaxial
HBT
BJT
SiGe
Strain
Transistors Design and construction
Integrated circuits Design and construction
Materials Fatigue
Online Access:http://hdl.handle.net/1853/7192

Internet

http://hdl.handle.net/1853/7192

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