TCAD modeling of mixed-mode degradation in SiGe HBTs
The objective of this work is to develop an effective TCAD based hot-carrier degradation model in predicting the damage that a SiGe HBT undergoes as it is stressed across bias, time and temperature.
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2016
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| Online Access: | http://hdl.handle.net/1853/54315 |