Pre-growth structures for high quality epitaxial graphene nanoelectronics grown on silicon carbide
For graphene to be a viable platform for nanoscale devices, high quality growth and structures are necessary. This means structuring the SiC surface to prevent graphene from having to be patterned using standard microelectronic processes. Presented in this thesis are new processes aimed at improving...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2016
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| Online Access: | http://hdl.handle.net/1853/54293 |