Interconnects for future technology generations - conventional CMOS with copper/low-k and beyond

• Main Author: Ceyhan, Ahmet
• Other Authors: Naeemi, Azad
• Format: Others
• Language: en_US
• Published: Georgia Institute of Technology 2015
• Subjects: Interconnects; Cu/low-k; Carbon nanotubes; Benchmarking; Tunneling FETs; Carbon nanotube FETs; Physical design and optimization
• Online Access: http://hdl.handle.net/1853/53080

The limitations of the conventional Cu/low-k interconnect technology for use in future ultra-scaled integrated circuits down to 7 nm in the year 2020 are investigated from the power/performance point of view. Compact models are used to demonstrate the impacts of various interconnect process parameters, for instance, the interconnect barrier/liner bilayer thickness and aspect ratio, on the design and optimization of a multilevel interconnect network. A framework to perform a sensitivity analysis for the circuit behavior to interconnect process parameters is created for future FinFET CMOS technology nodes. Multiple predictive cell libraries down to the 7‒nm technology node are constructed to enable early investigation of the electronic chip performance using commercial electronic design automation (EDA) tools with real chip information. Findings indicated new opportunities that arise for emerging novel interconnect technologies from the materials and process perspectives. These opportunities are evaluated based on potential benefits that are quantified with rigorous circuit-level simulations and requirements for key parameters are underlined. The impacts of various emerging interconnect technologies on the performances of emerging devices are analyzed to quantify the realistic circuit- and system-level benefits that these new switches can offer.