High χ block copolymers for sub 20 nm pitch patterning: synthesis, solvent annealing, directed self assembly, and selective block removal
Block copolymer (BCP) thin film patterns, generated using directed self-assembly (DSA) of diblock copolymers, have shown excellent promise as templates for semiconductor device manufacturing since they have the potential to produce feature pitches and sizes well below 20 nm and 10 nm, respectively,...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2014
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| Online Access: | http://hdl.handle.net/1853/50287 |