High χ block copolymers for sub 20 nm pitch patterning: synthesis, solvent annealing, directed self assembly, and selective block removal

High χ block copolymers for sub 20 nm pitch patterning: synthesis, solvent annealing, directed self assembly, and selective block removal

Block copolymer (BCP) thin film patterns, generated using directed self-assembly (DSA) of diblock copolymers, have shown excellent promise as templates for semiconductor device manufacturing since they have the potential to produce feature pitches and sizes well below 20 nm and 10 nm, respectively,...

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Bibliographic Details
Main Author: Jarnagin, Nathan D.
Other Authors: Henderson, Clifford L.
Format: Others
Language:en_US
Published: Georgia Institute of Technology 2014
Subjects:
Block copolymer
Phase separation
Directed self-assembly
Poly(styrene)-b-poly(hydroxystyrene)
Atomic layer deposition
Reactive ion etch
Poly(trimethylsilylstyrene)-block-poly(hydroxystyrene)
Block copolymers
Diblock copolymers
Thin films
Self-assembly (Chemistry)
Online Access:http://hdl.handle.net/1853/50287

Internet

http://hdl.handle.net/1853/50287

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