Development and integration of silicon-germanium front-end electronics for active phased-array antennas
The research presented in this thesis leverages silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology to develop microwave front-end electronics for active phased-array antennas. The highly integrated electronics will reduce costs and improve the feasibility of snow measurement...
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| Language: | en_US |
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Georgia Institute of Technology
2013
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| Online Access: | http://hdl.handle.net/1853/48990 |