Production and properties of epitaxial graphene on the carbon terminated face of hexagonal silicon carbide
Graphene is widely considered to be a promising candidate for a new generation of electronics, but there are many outstanding fundamental issues that need to be addressed before this promise can be realized. This thesis focuses on the production and properties of graphene grown epitaxially on the ca...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
Georgia Institute of Technology
2013
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1853/48705 |