Development of wide-band gap InGaN solar cells for high-efficiency photovoltaics
Main objective of the present work is to develop wide-band gap InGaN solar cells in the 2.4 - 2.9 eV range that can be an integral component of photovoltaic devices to achieve efficiencies greater than 50%. In the present work, various challenges in the novel III-nitride technology are identified a...
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Georgia Institute of Technology
2009
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| Online Access: | http://hdl.handle.net/1853/29627 |