Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments

Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments

Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extrem...

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Bibliographic Details
Main Author: Bellini, Marco
Published: Georgia Institute of Technology 2009
Subjects:
SiGe
Extreme environments
HBT-on-SOI
Heterojunction bipolar transistor
Silicon germanium
TCAD
Heterojunctions
Bipolar transistors
Silicon compounds
Germanium
Silicon-on-insulator technology
Online Access:http://hdl.handle.net/1853/28206

Internet

http://hdl.handle.net/1853/28206

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