Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications

Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications

The objective of the proposed research is to establish the technology for material growth by molecular beam epitaxy (MBE) and fabrication of indium gallium nitride/gallium nitride (InxGa1-xN/GaN) heterojunction solar cells. InxGa1-xN solar cell have the potential to span 90% of the solar spectrum,...

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Bibliographic Details
Main Author: Trybus, Elaissa Lee
Published: Georgia Institute of Technology 2009
Subjects:
InGaN
Mg doping
III-Nitrides
Photovoltaics
Molecular beam epitaxy
Indium compounds
Photovoltaic power generation
Solar cells
Online Access:http://hdl.handle.net/1853/28108

Internet

http://hdl.handle.net/1853/28108

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