The mixed-mode reliability stress of Silicon-Germanium heterojunction bipolar transistors

The mixed-mode reliability stress of Silicon-Germanium heterojunction bipolar transistors

The objective of the dissertation is to combine the recent Mixed-Mode reliability stress studies into a single text. The thesis starts with a review of silicon-germanium heterojunction bipolar transistor fundamentals, development trends, and the conventional reliability stress paths used in industry...

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Bibliographic Details
Main Author: Zhu, Chendong
Published: Georgia Institute of Technology 2007
Subjects:
Reliability
Hot carrier damage
Mixed-mode stress
Impact ionization
Self-heating
SiGe HBTs
Cryogenic temperature
Heterojunctions Reliability
Bipolar transistors Reliability
Online Access:http://hdl.handle.net/1853/14647

Internet

http://hdl.handle.net/1853/14647

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