Characteristics of Graphite Films on Silicon- and Carbon-Terminated Faces of Silicon Carbide
Ultrathin graphite films, with thickness from 1-30 atomic layers, are grown on the Si-terminated and C-terminated faces of 6H-SiC and 4H-SiC via thermal desorption of silicon in an ultrahigh vacuum (UHV) chamber or in a high-vacuum RF furnace. Graphite LEED patterns and atom-resolved STM images on...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2007
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| Online Access: | http://hdl.handle.net/1853/14024 |