Entwurf, Herstellung und Charakterisierung von GaN/AlGaN/GaN High Electron Mobility Transistoren für Leistungsanwendungen im GHz-Bereich

Entwurf, Herstellung und Charakterisierung von GaN/AlGaN/GaN High Electron Mobility Transistoren für Leistungsanwendungen im GHz-Bereich

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High Electron Mobility Transistoren (HEMTs), basierend auf dem Materialsystem GaN/AlGaN/GaN, wurden entworfen, hergestellt und elektrisch charakterisiert. Für das Maskendesign kam das CAD-Programm LasiCAD zum Einsatz. Das Design umfasste bis zu sechs Lithographieebenen. Die Herstellung der Bau...

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Bibliographic Details
Main Author:	Wächtler, Thomas
Other Authors:	TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik
Format:	Others
Language:	deu
Published:	Universitätsbibliothek Chemnitz 2005
Subjects:	GaN/AlGaN/GaN High Electron Mobility Transistor LasiCAD MBE Maskenentwurf ddc:620 Drei-Fünf-Halbleiter Elektronisches Bauelement Galliumnitrid Großsignalverhalten HEMT Heterostruktur Heterostruktur-Bauelement Hochfrequenztechnik Kleinsignalverhalten Metall-Halbleiter-Kontakt Mikroelektronik Molekularstrahlepitaxie Photolithographie <Halbleitertechnologie> Wide-gap-Halbleiter
Online Access:	http://nbn-resolving.de/urn:nbn:de:swb:ch1-200501943 http://nbn-resolving.de/urn:nbn:de:swb:ch1-200501943 http://www.qucosa.de/fileadmin/data/qucosa/documents/5115/data/BerichtLucent.pdf http://www.qucosa.de/fileadmin/data/qucosa/documents/5115/20050194.txt

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