Nanocluster-rich SiO2 layers produced by ion beam synthesis: electrical and optoelectronic properties

• Main Author: Gebel, Thoralf
• Other Authors: Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung
• Format: Others
• Language: English
• Published: Forschungszentrum Dresden 2010
• Subjects: nanocluster; electroluminescence; photoluminescence; non-volatile memory; charge trapping; retention; endurance; CV; IV; EL; PL; RBS; TEM; defect luminescence; silicon dioxide; SiO2; Fowler-Nordheim
• Online Access: http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29449; http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29449; http://www.qucosa.de/fileadmin/data/qucosa/documents/2944/4564.pdf

The aim of this work was to find a correlation between the electrical, optical and microstructural properties of thin SiO2 layers containing group IV nanostructures produced by ion beam synthesis. The investigations were focused on two main topics: The electrical properties of Ge- and Si-rich oxide layers were studied in order to check their suitability for non-volatile memory applications. Secondly, photo- and electroluminescence (PL and EL) results of Ge-, Si/C- and Sn-rich SiO2 layers were compared to electrical properties to get a better understanding of the luminescence mechanism.