Nanocluster-rich SiO2 layers produced by ion beam synthesis: electrical and optoelectronic properties

Nanocluster-rich SiO2 layers produced by ion beam synthesis: electrical and optoelectronic properties

The aim of this work was to find a correlation between the electrical, optical and microstructural properties of thin SiO2 layers containing group IV nanostructures produced by ion beam synthesis. The investigations were focused on two main topics: The electrical properties of Ge- and Si-rich oxide...

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Bibliographic Details
Main Author: Gebel, Thoralf
Other Authors: Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung
Format: Others
Language:English
Published: Forschungszentrum Dresden 2010
Subjects:
nanocluster
electroluminescence
photoluminescence
non-volatile memory
charge trapping
retention
endurance
CV
IV
EL
PL
RBS
TEM
defect luminescence
silicon dioxide
SiO2
Fowler-Nordheim
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29449
http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29449
http://www.qucosa.de/fileadmin/data/qucosa/documents/2944/4564.pdf

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29449
http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29449
http://www.qucosa.de/fileadmin/data/qucosa/documents/2944/4564.pdf

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