Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems

Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems

In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic...

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Bibliographic Details
Main Authors: Mueller, Steve, Waechtler, Thomas, Hofmann, Lutz, Tuchscherer, Andre, Mothes, Robert, Gordan, Ovidiu, Lehmann, Daniel, Haidu, Francisc, Ogiewa, Marcel, Gerlich, Lukas, Ding, Shao-Feng, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Zahn, Dietrich R.T., Qu, Xin-Ping
Other Authors: Chemnitz University of Technology, Center for Microtechnologies
Format: Others
Language:English
Published: Universitätsbibliothek Chemnitz 2012
Subjects:
Atomlagenabscheidung
ALD
Ruthenium
Ameisensäure
Wasserstoff
Reduktion
ULSI
Metallisierung
Galvanik
Spintronik
Atomic Layer Deposition
Copper Oxide
Formic Acid
Hydrogen
Reduction
Interconnect
Electrochemical deposition
ECD
Spintronics
ddc:600
ddc:620
ddc:621
ddc:667
Kupferoxid
Metallisieren
Galvanische Beschichtung
Kupfer
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-84003
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-84003
http://www.qucosa.de/fileadmin/data/qucosa/documents/8400/Mueller_SCD2011.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/8400/signatur.txt.asc

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