Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems

In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic...

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Bibliographic Details
Main Authors: Mueller, Steve, Waechtler, Thomas, Hofmann, Lutz, Tuchscherer, Andre, Mothes, Robert, Gordan, Ovidiu, Lehmann, Daniel, Haidu, Francisc, Ogiewa, Marcel, Gerlich, Lukas, Ding, Shao-Feng, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Zahn, Dietrich R.T., Qu, Xin-Ping
Other Authors: Chemnitz University of Technology, Center for Microtechnologies
Format: Others
Language:English
Published: Universitätsbibliothek Chemnitz 2012
Subjects:
ALD
ECD
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-84003
http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-84003
http://www.qucosa.de/fileadmin/data/qucosa/documents/8400/Mueller_SCD2011.pdf
http://www.qucosa.de/fileadmin/data/qucosa/documents/8400/signatur.txt.asc