Quantum Mechanical and Atomic Level ab initio Calculation of Electron Transport through Ultrathin Gate Dielectrics of Metal-Oxide-Semiconductor Field Effect Transistors
The low dimensions of the state-of-the-art nanoscale transistors exhibit increasing quantum mechanical effects, which are no longer negligible. Gate tunneling current is one of such effects, that is responsible for high power consumption and high working temperature in microprocessors. This in turn...
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| Format: | Doctoral Thesis |
| Language: | English |
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Universitätsbibliothek Chemnitz
2008
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| Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200800477 http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200800477 http://www.qucosa.de/fileadmin/data/qucosa/documents/5567/data/Dissertation_Nadimi_nachVert_end_Druck.pdf http://www.qucosa.de/fileadmin/data/qucosa/documents/5567/20080047.txt |