Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 109

Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 109

CuI is a p-type transparent conductive semiconductor with unique optoelectronic properties, including wide band gap (3.1 eV), high hole mobility (>40 cm2 V−1 s−1 in bulk), and large room-temperature exciton binding energy (62 meV). The difficulty in epitaxy of CuI is the main obstacle for its app...

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Bibliographic Details
Main Authors: Yang, Chang, Kneiß, Max, Schein, Friedrich-Leonhard, Lorenz, Michael, Grundmann, Marius
Other Authors: Universität Leipzig, Fakultät für Physik und Geowissenschaften
Format: Article
Language:English
Published: Universitätsbibliothek Leipzig 2016
Subjects:
elektronische Geräte
Halbleiter
Oberfläche
Grenzflächen
dünne Schichten
electronic devices
semiconductors
surfaces
interfaces and thin films
ddc:530
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-205875
http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-205875
http://www.qucosa.de/fileadmin/data/qucosa/documents/20587/OAP-2016-099_chang_srep21937.pdf

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-205875
http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-205875
http://www.qucosa.de/fileadmin/data/qucosa/documents/20587/OAP-2016-099_chang_srep21937.pdf

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