Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon
Main Authors: | Yoshida, Masayuki, Matsumoto, Satoru, Tanaka, Shuji |
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Other Authors: | Yoshida Semiconductor Laboratory, |
Format: | Article |
Language: | English |
Published: |
Universitätsbibliothek Leipzig
2015
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Subjects: | |
Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-185496 http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-185496 http://www.qucosa.de/fileadmin/data/qucosa/documents/18549/diff_fund_16%282011%2962.pdf |
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