Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon

Bibliographic Details
Main Authors: Yoshida, Masayuki, Matsumoto, Satoru, Tanaka, Shuji
Other Authors: Yoshida Semiconductor Laboratory,
Format: Article
Language:English
Published: Universitätsbibliothek Leipzig 2015
Subjects:
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-185496
http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-185496
http://www.qucosa.de/fileadmin/data/qucosa/documents/18549/diff_fund_16%282011%2962.pdf

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