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  1. 1
    Formation mechanism of plateau, rapid fall and tail in phosphorus diffusion profile in silicon based on the pair diffusion models of vacancy mechanism and interstitial mechanism
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  2. 2
    Near equilibrium in dissociative diffusion of nickel in silicon
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  3. 3
    Quantitative study of near equilibrium in dissociative mechanism of nickel in silicon
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  4. 4
    Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon
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  5. 5
    Formation mechanism of plateau, rapid fall and tail in phosphorus diffusion profile in silicon based on the pair diffusion models of vacancy mechanism and interstitial mechanism
    Other Authors: “...Yoshida Semiconductor Laboratory, ...”
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