Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon

Bibliographic Details
Main Authors: Yoshida, Masayuki, Matsumoto, Satoru, Tanaka, Shuji
Other Authors: Yoshida Semiconductor Laboratory,
Format: Article
Language:English
Published: Universitätsbibliothek Leipzig 2015
Subjects:
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-185496
http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-185496
http://www.qucosa.de/fileadmin/data/qucosa/documents/18549/diff_fund_16%282011%2962.pdf
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spelling ndltd-DRESDEN-oai-qucosa.de-bsz-15-qucosa-1854962015-10-29T03:25:06Z Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon Yoshida, Masayuki Matsumoto, Satoru Tanaka, Shuji Diffusion Transport diffusion transport ddc:530 Universitätsbibliothek Leipzig Yoshida Semiconductor Laboratory, Keio University, Department of Electronics and Electrical Engineering Universität Leipzig, Fakultät für Physik und Geowissenschaften 2015-10-28 doc-type:article application/pdf http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-185496 urn:nbn:de:bsz:15-qucosa-185496 issn:1862-4138 http://www.qucosa.de/fileadmin/data/qucosa/documents/18549/diff_fund_16%282011%2962.pdf Diffusion fundamentals 16 (2011) 62, S. 1-2 eng
collection NDLTD
language English
format Article
sources NDLTD
topic Diffusion
Transport
diffusion
transport
ddc:530
spellingShingle Diffusion
Transport
diffusion
transport
ddc:530
Yoshida, Masayuki
Matsumoto, Satoru
Tanaka, Shuji
Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon
author2 Yoshida Semiconductor Laboratory,
author_facet Yoshida Semiconductor Laboratory,
Yoshida, Masayuki
Matsumoto, Satoru
Tanaka, Shuji
author Yoshida, Masayuki
Matsumoto, Satoru
Tanaka, Shuji
author_sort Yoshida, Masayuki
title Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon
title_short Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon
title_full Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon
title_fullStr Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon
title_full_unstemmed Application of Watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon
title_sort application of watkins’ model of phosphorus- and arsenic-vacancy pairs to the interstitialcy-diffusion of phosphorus and arsenic in silicon
publisher Universitätsbibliothek Leipzig
publishDate 2015
url http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-185496
http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-185496
http://www.qucosa.de/fileadmin/data/qucosa/documents/18549/diff_fund_16%282011%2962.pdf
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