Schottky contacts to In2O3

Schottky contacts to In2O3

n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a...

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Bibliographic Details
Main Authors: von Wenckstern, Holger, Splith, Daniel Thomas, Schmidt, Florian, Grundmann, Marius, Bierwagen, Oliver, Speck, James S.
Other Authors: Universität Leipzig, Fakultät für Physik und Geowissenschaften
Format: Article
Language:English
Published: Universitätsbibliothek Leipzig 2014
Subjects:
Ozon
Schottky-Barriere
Indiumoxid
Ozone
Schottky barriers
indium oxide
Metal to metal contacts
ddc:530
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-143976
http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-143976
http://www.qucosa.de/fileadmin/data/qucosa/documents/14397/1.4870536.pdf

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-143976
http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-143976
http://www.qucosa.de/fileadmin/data/qucosa/documents/14397/1.4870536.pdf

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