Investigation of physical and chemical interactions during etching of silicon in dual frequency capacitively coupled HBr/NF3 gas discharges
High aspect ratio silicon etching used for DRAM manufacturing still remains as one of the biggest challenges in semiconductor fabrication, requiring well understood and characterized process fundamentals. In this study, physical and chemical interactions during etching silicon in capacitively coupl...
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| Format: | Doctoral Thesis |
| Language: | English |
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Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden
2009
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| Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-25338 http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-25338 http://www.qucosa.de/fileadmin/data/qucosa/documents/2533/Diss_MReinicke.pdf |