Investigation of physical and chemical interactions during etching of silicon in dual frequency capacitively coupled HBr/NF3 gas discharges

Investigation of physical and chemical interactions during etching of silicon in dual frequency capacitively coupled HBr/NF3 gas discharges

High aspect ratio silicon etching used for DRAM manufacturing still remains as one of the biggest challenges in semiconductor fabrication, requiring well understood and characterized process fundamentals. In this study, physical and chemical interactions during etching silicon in capacitively coupl...

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Bibliographic Details
Main Author: Reinicke, Marco
Other Authors: Technische Universität Dresden, Fakultät Elektrotechnik und Informationstechnik
Format: Doctoral Thesis
Language:English
Published: Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden 2009
Subjects:
DRAM
MERIE
capacitive discharge
high aspect ratio silicon etching
discharge analysis
DRAM (Dynamic Random Access Memory)
MERIE (Magnetically Enhanced Reactive Ion Etching)
kapazitive Gasentladungen
Siliziumätzen mit hohen Aspektverhältnissen
Analyse von Gasentladungen
ddc:620
rvk:ZN 4172
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-25338
http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-25338
http://www.qucosa.de/fileadmin/data/qucosa/documents/2533/Diss_MReinicke.pdf

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-25338
http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-25338
http://www.qucosa.de/fileadmin/data/qucosa/documents/2533/Diss_MReinicke.pdf

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