Integration of III-V compound nanocrystals in silicon via ion beam implantation and flash lamp annealing

Integration of III-V compound nanocrystals in silicon via ion beam implantation and flash lamp annealing

The progress in device performance of modern microelectronic technology is mainly driven by down-scaling. In the near future, this road will probably reach a point where physical limits make even more down-scaling impossible. The substitution of single components materialwise over the last decades,...

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Bibliographic Details
Main Author: Wutzler, René
Other Authors: Technische Universität Dresden, Fakultät Mathematik und Naturwissenschaften
Format: Doctoral Thesis
Language:English
Published: Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden 2017
Subjects:
Ionenimplantation
III-V Verbindungshalbleiter
Nanodrähte
Blitzlampenausheilung
Ion implantation
III-V compound semiconductors
nanowires
flash lamp annealing
ddc:530
rvk:UP 3000
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-231433
http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-231433
http://www.qucosa.de/fileadmin/data/qucosa/documents/23143/Dissertation_Rene_Wutzler.pdf

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-231433
http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-231433
http://www.qucosa.de/fileadmin/data/qucosa/documents/23143/Dissertation_Rene_Wutzler.pdf

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