Characterization and evaluation of a 6.5-kV silicon carbide bipolar diode module

Characterization and evaluation of a 6.5-kV silicon carbide bipolar diode module

This work presents a 6.5-kV 1-kA SiC bipolar diode module for megawatt-range medium voltage converters. The study comprises a review of SiC devices and bipolar diodes, a description of the die and module technology, device characterization and modelling and benchmark of the device at converter level...

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Bibliographic Details
Main Author: Filsecker, Felipe
Other Authors: Technische Universität Dresden, Fakultät Elektrotechnik und Informationstechnik
Format: Doctoral Thesis
Language:English
Published: Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden 2017
Subjects:
Siliziumcarbid
bipolare Diode
Charakterisierung Halbleiterbauelement
Mittelspannungsstromrichter
silicon carbide
bipolar diode
semiconductor device chaacterization
medium-voltage converters
wide band gap semiconductors
ddc:621.3
rvk:ZN 8340
rvk:ZN 8350
Diode
Stromrichter
Modellierung
Siliciumcarbid
Wide-gap-Halbleiter
Mittelspannung
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-217848
http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-217848
http://www.qucosa.de/fileadmin/data/qucosa/documents/21784/diss_.pdf

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-217848
http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-217848
http://www.qucosa.de/fileadmin/data/qucosa/documents/21784/diss_.pdf

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