A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness
Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication because it allows creating electrically insulating areas which enclose electrically conductive devices and device areas, respectively. Deal and Grove developed the first model (DG-model) for the thermal ox...
Main Authors: | Gerlach, Gerald, Maser, Karl |
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Other Authors: | Hindawi, |
Format: | Article |
Language: | English |
Published: |
Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden
2017
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Subjects: | |
Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-214263 http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-214263 http://www.qucosa.de/fileadmin/data/qucosa/documents/21426/7545632.pdf |
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