A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness

A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness

Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication because it allows creating electrically insulating areas which enclose electrically conductive devices and device areas, respectively. Deal and Grove developed the first model (DG-model) for the thermal ox...

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Bibliographic Details
Main Authors: Gerlach, Gerald, Maser, Karl
Other Authors: Hindawi,
Format: Article
Language:English
Published: Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden 2017
Subjects:
Selbst-konsistentes Modell
thermische Oxidation
niedrige Oxiddicke
TU Dresden
Publikationsfonds
Self-Consistent Model
Thermal Oxidation
Low Oxide Thickness
Publishing Fund
ddc:530
rvk:UA 1000
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-214263
http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-214263
http://www.qucosa.de/fileadmin/data/qucosa/documents/21426/7545632.pdf

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-214263
http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-214263
http://www.qucosa.de/fileadmin/data/qucosa/documents/21426/7545632.pdf

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