Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2) thin films instead of conventional perovskite ferroelectrics as a...

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Bibliographic Details
Main Author: Yurchuk, Ekaterina
Other Authors: Technische Universität Dresden, Fakultät Elektrotechnik und Informationstechnik
Format: Doctoral Thesis
Language:English
Published: Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden 2015
Subjects:
Nichtflüchtiger Halbleiterpeicher
Ferroelektrische Speicher
Ferroelektrischer transistor
Hafniumoxid
Ferroelektrische Dünnschichten
Nonvolatile semiconductor memory
ferroelectric memory transistor
FeFET
ferroelectric field effect transistor
ferroelectric thin films
hafnium oxide
ddc:621.3
rvk:ZN 4870
rvk:ZN 3430
Speicher
Halbleiterspeicher
MOS-Speicher
Nichtflüchtiger Speicher
Elektrischer Speicher
Speicherelement
Feldeffekttransistor
Ferroelektrischer Transistor
Hafniumdioxid
Dünne Schicht
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-172000
http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-172000
http://www.qucosa.de/fileadmin/data/qucosa/documents/17200/Dissertation_Yurchuk_final_PDF_ISO.pdf

Internet

http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-172000
http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-172000
http://www.qucosa.de/fileadmin/data/qucosa/documents/17200/Dissertation_Yurchuk_final_PDF_ISO.pdf

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