Präzipitation von SiO2 in Silizium nach einer Sauerstoff-Hochdosisimplantation
During ion beam synthesis of compounds in Si a specific redistribution process is responsible for the modification of the implant profile towards a uniform buried compound layer. This process is referred to as Ostwald ripening. Implantation of substoichiometric doses of reactive species leads to str...
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| Language: | German |
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Forschungszentrum Rossendorf
2010
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| Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-30312 https://hzdr.qucosa.de/id/qucosa%3A21858 https://hzdr.qucosa.de/api/qucosa%3A21858/attachment/ATT-0/ |