New Precursors for CVD Copper Metallization

New Precursors for CVD Copper Metallization

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A novel CVD copper process is described using two new copper CVD precursors, KI3 and KI5, for the fabrication of IC or TSV (Through Silicon Via) copper interconnects. The highly conformal CVD copper can provide seed layers for subsequent copper electroplating or can be used to directly fabrica...

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Bibliographic Details
Main Authors: Norman, John A. T., Perez, Melanie, Schulz, Stefan E., Waechtler, Thomas
Format: Article
Language:English
Published: Technische Universität Chemnitz 2008
Subjects:
info:eu-repo/classification/ddc/540
ddc:540
info:eu-repo/classification/ddc/620
ddc:620
CVD-Verfahren
Elektroniktechnologie
Verkupferung
3D integration
Chemical Vapor Deposition
Copper
Seed layer
Through silicon via (TSV)
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200801346
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http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200801346
https://monarch.qucosa.de/id/qucosa%3A18978
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https://monarch.qucosa.de/api/qucosa%3A18978/attachment/ATT-1/

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