Energy loss of light ions channeling in silicon
<p>Experimental measurements of rate of energy loss were made for protons of energy .5 to 1.6 MeV channeling through 1 μm thick silicon targets along the <110>, <111>, and <211> axial directions, and the {100}, {110}, {111}, and {211} planar directions...
Similar Items
-
Ion channelling and electronic excitations in silicon
by: Lim, Anthony Craig
Published: (2014) -
Electron Loss from Light Ions
by: Strong, R.
Published: (1977) -
Energy loss distributions of 7 TeV protons channeled in a bent silicon crystals
by: Stojanov Nace, et al.
Published: (2013-01-01) -
Low temperature ion-irradiation effects in silicon studied by ion-channelling techniques
by: Georgiacodis, D. N.
Published: (1985) -
Long-range effect in condensed matter and its revealing in implanted with high energy light ions silicon
by: A. A. Groza, et al.
Published: (2010-03-01)