Energy loss of light ions channeling in silicon

Energy loss of light ions channeling in silicon

<p>Experimental measurements of rate of energy loss were made for protons of energy .5 to 1.6 MeV channeling through 1 μm thick silicon targets along the &lt;110&gt;, &lt;111&gt;, and &lt;211&gt; axial directions, and the {100}, {110}, {111}, and {211} planar directions...

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Bibliographic Details
Main Author: Melvin, Jonathan David
Format: Others
Published: 1974
Online Access:https://thesis.library.caltech.edu/9258/1/Melvin_JD_1974.pdf
Melvin, Jonathan David (1974) Energy loss of light ions channeling in silicon. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/WJBG-JE54. https://resolver.caltech.edu/CaltechTHESIS:10292015-095449554 <https://resolver.caltech.edu/CaltechTHESIS:10292015-095449554>

Internet

https://thesis.library.caltech.edu/9258/1/Melvin_JD_1974.pdf
Melvin, Jonathan David (1974) Energy loss of light ions channeling in silicon. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/WJBG-JE54. https://resolver.caltech.edu/CaltechTHESIS:10292015-095449554 <https://resolver.caltech.edu/CaltechTHESIS:10292015-095449554>

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