Novel devices employing epitaxial wide bandgap semiconductors : physics, electronics and materials characterization

Novel devices employing epitaxial wide bandgap semiconductors : physics, electronics and materials characterization

This thesis describes the developments of novel semiconductor devices based on epitaxial wide bandgap semiconductors GaN and ZnS. The number of interesting and exciting results in physics, electronics and materials science of these systems were found in studies motivated by these devices. This thesi...

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Bibliographic Details
Main Author: Bandić, Zvonimir Z.
Format: Others
Language:en
Published: 2000
Online Access:https://thesis.library.caltech.edu/6096/2/Bandic_zz_2000.pdf
Bandić, Zvonimir Z. (2000) Novel devices employing epitaxial wide bandgap semiconductors : physics, electronics and materials characterization. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/cnyb-cq58. https://resolver.caltech.edu/CaltechTHESIS:10052010-115649444 <https://resolver.caltech.edu/CaltechTHESIS:10052010-115649444>

Internet

https://thesis.library.caltech.edu/6096/2/Bandic_zz_2000.pdf
Bandić, Zvonimir Z. (2000) Novel devices employing epitaxial wide bandgap semiconductors : physics, electronics and materials characterization. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/cnyb-cq58. https://resolver.caltech.edu/CaltechTHESIS:10052010-115649444 <https://resolver.caltech.edu/CaltechTHESIS:10052010-115649444>

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