A Charge-Controlled Model for MOS Transistors
<p>As MOS (metal-oxide-semiconductor) devices scale to submicron lengths, short-channel effects begin to dominate device behavior, and designers of VLSI (very-large-scale-integrated) circuits see an improved transistor model as a necessary tool. A new physically based, charge-controlled model...
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| Format: | Others |
| Language: | en |
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1989
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| Online Access: | https://thesis.library.caltech.edu/556/9/maher-ma_1989.pdf Maher, Mary Ann Cecilia (1989) A Charge-Controlled Model for MOS Transistors. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/JHQE-T452. https://resolver.caltech.edu/CaltechETD:etd-02082007-135328 <https://resolver.caltech.edu/CaltechETD:etd-02082007-135328> |
Internet
https://thesis.library.caltech.edu/556/9/maher-ma_1989.pdfMaher, Mary Ann Cecilia (1989) A Charge-Controlled Model for MOS Transistors. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/JHQE-T452. https://resolver.caltech.edu/CaltechETD:etd-02082007-135328 <https://resolver.caltech.edu/CaltechETD:etd-02082007-135328>