Optoelectronic structure fabrication by organometallic vapor-phase epitaxy and selective epitaxy

Optoelectronic structure fabrication by organometallic vapor-phase epitaxy and selective epitaxy

NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document. The internal configuration and external supports of OMVPE reactors are examined. The quality of epitaxial layers deposited by an OMVPE reactor is strongly influenced by its internal co...

Full description

Bibliographic Details
Main Author: Tsai, Charles Su-Chang
Format: Others
Language:en
Published: 1996
Online Access:https://thesis.library.caltech.edu/5125/1/Tsai_csc_1996.pdf
Tsai, Charles Su-Chang (1996) Optoelectronic structure fabrication by organometallic vapor-phase epitaxy and selective epitaxy. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/vrda-c377. https://resolver.caltech.edu/CaltechETD:etd-12222007-114128 <https://resolver.caltech.edu/CaltechETD:etd-12222007-114128>

Internet

https://thesis.library.caltech.edu/5125/1/Tsai_csc_1996.pdf
Tsai, Charles Su-Chang (1996) Optoelectronic structure fabrication by organometallic vapor-phase epitaxy and selective epitaxy. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/vrda-c377. https://resolver.caltech.edu/CaltechETD:etd-12222007-114128 <https://resolver.caltech.edu/CaltechETD:etd-12222007-114128>

Similar Items