Asymptotic methods in semiconductor device modeling
The behavior of metal oxide semiconductor field effect transistors (MOSFETs) with small aspect ratio and large doping levels is analyzed using formal perturbation techniques. Formally, we will show that in the limit of small aspect ratio there is a region in the middle of the channel under the contr...
Internet
https://thesis.library.caltech.edu/440/1/Ward_jw_1988.pdfWard, Michael Jeffrey (1988) Asymptotic methods in semiconductor device modeling. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/08TK-NM84. https://resolver.caltech.edu/CaltechETD:etd-02012007-131948 <https://resolver.caltech.edu/CaltechETD:etd-02012007-131948>