Electron tunneling through thin films of aluminum nitride

Electron tunneling through thin films of aluminum nitride

Thin film structures involving Aluminum as the base electrode, Aluminum Nitride as the insulating layer, Magnesium, Aluminum or Gold as the counterelectrodes were fabricated by nitriding a freshly deposited Aluminum film in a Nitrogen glow discharge with the thickness of the insulator varying from s...

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Bibliographic Details
Main Author: Lewicki, George W.
Format: Others
Published: 1966
Online Access:https://thesis.library.caltech.edu/3796/1/Lewicki_g_1966.pdf
Lewicki, George W. (1966) Electron tunneling through thin films of aluminum nitride. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/QDH7-C768. https://resolver.caltech.edu/CaltechETD:etd-09272002-150142 <https://resolver.caltech.edu/CaltechETD:etd-09272002-150142>

Internet

https://thesis.library.caltech.edu/3796/1/Lewicki_g_1966.pdf
Lewicki, George W. (1966) Electron tunneling through thin films of aluminum nitride. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/QDH7-C768. https://resolver.caltech.edu/CaltechETD:etd-09272002-150142 <https://resolver.caltech.edu/CaltechETD:etd-09272002-150142>

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