Characterization and application of MeV ion implanted layers in III-V compound semiconductors

Characterization and application of MeV ion implanted layers in III-V compound semiconductors

Ion implantation at keV energies has become a well-established technique for surface modification of solid materials, especially semiconductors. The technique of MeV ion implantation has attracted considerable attention in recent years as it provides an extension of ion implantation technique with a...

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Bibliographic Details
Main Author: Xiong, Fulin
Format: Others
Language:en
Published: 1990
Online Access:https://thesis.library.caltech.edu/3716/1/Xiong_f_1990.pdf
Xiong, Fulin (1990) Characterization and application of MeV ion implanted layers in III-V compound semiconductors. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/yjk5-wv20. https://resolver.caltech.edu/CaltechETD:etd-09232002-150110 <https://resolver.caltech.edu/CaltechETD:etd-09232002-150110>

Internet

https://thesis.library.caltech.edu/3716/1/Xiong_f_1990.pdf
Xiong, Fulin (1990) Characterization and application of MeV ion implanted layers in III-V compound semiconductors. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/yjk5-wv20. https://resolver.caltech.edu/CaltechETD:etd-09232002-150110 <https://resolver.caltech.edu/CaltechETD:etd-09232002-150110>

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