The electrical properties of nanoscale parallel semiconductor interfaces
Nanosphere lithography has been used to prepare a series of ordered, periodic arrays of low barrier height n-Si/Ni nanometer-scale contacts interspersed amongst high barrier height n-Si/liquid contacts. To form the arrays, crystalline bilayers of close-packed latex spheres were deposited onto (100)...
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Rossi, Robert Charles (2002) The electrical properties of nanoscale parallel semiconductor interfaces. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/F9YE-BM08. https://resolver.caltech.edu/CaltechETD:etd-07132001-180811 <https://resolver.caltech.edu/CaltechETD:etd-07132001-180811>