I. Heteroepitaxy on Si. II. Ion implantation in Si and heterostructures
The themes of this thesis, heteroepitaxy and ion implantation, are two areas that have been very actively researched in the last two decades. Heterostructures made of III-V compound semiconductors by MBE and OMVPE have been used extensively in the fabrication of optoelectronics devices such as high...
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| Format: | Others |
| Language: | en |
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1991
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| Online Access: | https://thesis.library.caltech.edu/2762/1/Bai_g_1991.pdf Bai, Gang (1991) I. Heteroepitaxy on Si. II. Ion implantation in Si and heterostructures. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/v8kr-gm23. https://resolver.caltech.edu/CaltechETD:etd-06282007-105319 <https://resolver.caltech.edu/CaltechETD:etd-06282007-105319> |
Internet
https://thesis.library.caltech.edu/2762/1/Bai_g_1991.pdfBai, Gang (1991) I. Heteroepitaxy on Si. II. Ion implantation in Si and heterostructures. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/v8kr-gm23. https://resolver.caltech.edu/CaltechETD:etd-06282007-105319 <https://resolver.caltech.edu/CaltechETD:etd-06282007-105319>