Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide

Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide

<p>Part I</p> <p>With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated in this work. Hall effect and sheet resistivity measurement...

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Bibliographic Details
Main Author: Pashley, Richard Dana
Format: Others
Language:en
Published: 1974
Online Access:https://thesis.library.caltech.edu/14101/1/Pashley_RD_1974.pdf
Pashley, Richard Dana (1974) Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/gat7-kp43. https://resolver.caltech.edu/CaltechTHESIS:03102021-184153613 <https://resolver.caltech.edu/CaltechTHESIS:03102021-184153613>

Internet

https://thesis.library.caltech.edu/14101/1/Pashley_RD_1974.pdf
Pashley, Richard Dana (1974) Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/gat7-kp43. https://resolver.caltech.edu/CaltechTHESIS:03102021-184153613 <https://resolver.caltech.edu/CaltechTHESIS:03102021-184153613>

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