Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise

Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise

Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike traditional...

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Bibliographic Details
Main Author: Masuda, Michael Curtis Meyer
Format: Others
Published: DigitalCommons@CalPoly 2014
Subjects:
Low frequency noise
HEMT
GaN
Gate Stress
degradation
electron traps
Electrical and Electronics
Electronic Devices and Semiconductor Manufacturing
Semiconductor and Optical Materials
Online Access:https://digitalcommons.calpoly.edu/theses/1169
https://digitalcommons.calpoly.edu/cgi/viewcontent.cgi?article=2257&context=theses

Internet

https://digitalcommons.calpoly.edu/theses/1169
https://digitalcommons.calpoly.edu/cgi/viewcontent.cgi?article=2257&context=theses

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