Technique for Efficient Evaluation of SRAM Timing Failure

This brief presents a technique to evaluate the timing variation of static random access memory (SRAM). Specifically, a method called loop flattening, which reduces the evaluation of the timing statistics in the complex highly structured circuit to that of a single chain of component circuits, is ju...

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Bibliographic Details
Main Authors: Qazi, Masood (Contributor), Tikekar, Mehul (Contributor), Dolecek, Lara (Author), Shah, Devavrat (Contributor), Chandrakasan, Anantha P. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2015-02-06T16:31:23Z.
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Online Access:Get fulltext
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100 1 0 |a Qazi, Masood  |e author 
100 1 0 |a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science  |e contributor 
100 1 0 |a Chandrakasan, Anantha P.  |e contributor 
100 1 0 |a Qazi, Masood  |e contributor 
100 1 0 |a Tikekar, Mehul  |e contributor 
100 1 0 |a Shah, Devavrat  |e contributor 
100 1 0 |a Chandrakasan, Anantha P.  |e contributor 
700 1 0 |a Tikekar, Mehul  |e author 
700 1 0 |a Dolecek, Lara  |e author 
700 1 0 |a Shah, Devavrat  |e author 
700 1 0 |a Chandrakasan, Anantha P.  |e author 
245 0 0 |a Technique for Efficient Evaluation of SRAM Timing Failure 
260 |b Institute of Electrical and Electronics Engineers (IEEE),   |c 2015-02-06T16:31:23Z. 
856 |z Get fulltext  |u http://hdl.handle.net/1721.1/93898 
520 |a This brief presents a technique to evaluate the timing variation of static random access memory (SRAM). Specifically, a method called loop flattening, which reduces the evaluation of the timing statistics in the complex highly structured circuit to that of a single chain of component circuits, is justified. Then, to very quickly evaluate the timing delay of a single chain, a statistical method based on importance sampling augmented with targeted high-dimensional spherical sampling can be employed. The overall methodology has shown 650× or greater speedup over the nominal Monte Carlo approach with 10.5% accuracy in probability. Examples based on both the large-signal and small-signal SRAM read path are discussed, and a detailed comparison with state-of-the-art accelerated statistical simulation techniques is given. 
520 |a Semiconductor Research Corporation. Focus Center for Circuit and System Solutions (C2S2) 
546 |a en_US 
655 7 |a Article 
773 |t IEEE Transactions on Very Large Scale Integration (VLSI) Systems