Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates
The properties of InAs [subscript x]P1[subscript −x] compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ε/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics,
2014-12-01T15:31:24Z.
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| Subjects: | |
| Online Access: | Get fulltext |