Mapping strain rate dependence of dislocation-defect interactions by atomistic simulations

Mapping strain rate dependence of dislocation-defect interactions by atomistic simulations

Probing the mechanisms of defect-defect interactions at strain rates lower than 10[superscript 6] s[superscript −1] is an unresolved challenge to date to molecular dynamics (MD) techniques. Here we propose an original atomistic approach based on transition state theory and the concept of a strain-de...

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Bibliographic Details
Main Authors: Fan, Yue (Contributor), Osetsky, Yuri N. (Author), Yip, Sidney (Contributor), Yildiz, Bilge (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor)
Format: Article
Language:English
Published: National Academy of Sciences (U.S.), 2014-08-28T13:56:42Z.
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